FFSB2065BDN-F085 datasheet, diode equivalent, ON Semiconductor

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FFSB2065BDN-F085 Datasheet

Features and benefits

* Max Junction Temperature 175°C
* Avalanche Rated 49 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* .

Application

* Automotive BEV−EV
* Automotive HEV−EV Onboard Chargers
* Automotive HEV−EV DC−DC Converters MOSFET MAXIMU.

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excelle.

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